A STUDY ON ETCHING PARAMETERS OF A REACTIVE ION-BEAM ETCH FOR GAAS AND INP

被引：27

作者：

TADOKORO, T

KOYAMA, F

IGA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 03期

关键词：

D O I：

10.1143/JJAP.27.389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：389 / 392

页数：4

共 17 条

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[3]

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[5]

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HU, EL ;

HOWARD, RE .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1022-1024

[8] CHEMICALLY ETCHED-MIRROR GALNASP/INP LASERS - REVIEW [J].

IGA, K ;

MILLER, BI .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) :22-29

[9]

IGA K, 1984, REV LASER ENG, V12, P173

[10] NOVEL STRUCTURE OF LASER DIODE AND LIGHT-EMITTING DIODE REALIZED BY COAXIAL TRANSVERSE JUNCTION (CTJ) [J].

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