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NOVEL STRUCTURE OF LASER DIODE AND LIGHT-EMITTING DIODE REALIZED BY COAXIAL TRANSVERSE JUNCTION (CTJ)
被引:7
作者
:
ITO, H
论文数:
0
引用数:
0
h-index:
0
ITO, H
KOMAGATA, N
论文数:
0
引用数:
0
h-index:
0
KOMAGATA, N
YAMADA, H
论文数:
0
引用数:
0
h-index:
0
YAMADA, H
INABA, H
论文数:
0
引用数:
0
h-index:
0
INABA, H
机构
:
来源
:
ELECTRONICS LETTERS
|
1984年
/ 20卷
/ 14期
关键词
:
D O I
:
10.1049/el:19840399
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:577 / 579
页数:3
相关论文
共 5 条
[1]
LONGITUDINAL INJECTION-PLASMA LASER OF INSB (10 DEGREES K - O-21KG LONGITUDINAL TO CURRENT - E)
MELNGAILIS, I
论文数:
0
引用数:
0
h-index:
0
MELNGAILIS, I
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(03)
: 59
-
+
[2]
GAINASP-INP SURFACE EMITTING INJECTION-LASER WITH BURIED HETEROSTRUCTURES
OKUDA, H
论文数:
0
引用数:
0
h-index:
0
OKUDA, H
SODA, H
论文数:
0
引用数:
0
h-index:
0
SODA, H
MORIKI, K
论文数:
0
引用数:
0
h-index:
0
MORIKI, K
MOTEGI, Y
论文数:
0
引用数:
0
h-index:
0
MOTEGI, Y
IGA, K
论文数:
0
引用数:
0
h-index:
0
IGA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(08)
: L563
-
L566
[3]
GAINASP-INP SURFACE EMITTING INJECTION-LASERS
SODA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
SODA, H
IGA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
IGA, K
KITAHARA, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
KITAHARA, C
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
SUEMATSU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(12)
: 2329
-
2330
[4]
YAMADA H, 1983, 1983 DRY PROC S TOKY, P73
[5]
YAMADA H, MICRO PROCESSING GAA, P591
←
1
→
共 5 条
[1]
LONGITUDINAL INJECTION-PLASMA LASER OF INSB (10 DEGREES K - O-21KG LONGITUDINAL TO CURRENT - E)
MELNGAILIS, I
论文数:
0
引用数:
0
h-index:
0
MELNGAILIS, I
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(03)
: 59
-
+
[2]
GAINASP-INP SURFACE EMITTING INJECTION-LASER WITH BURIED HETEROSTRUCTURES
OKUDA, H
论文数:
0
引用数:
0
h-index:
0
OKUDA, H
SODA, H
论文数:
0
引用数:
0
h-index:
0
SODA, H
MORIKI, K
论文数:
0
引用数:
0
h-index:
0
MORIKI, K
MOTEGI, Y
论文数:
0
引用数:
0
h-index:
0
MOTEGI, Y
IGA, K
论文数:
0
引用数:
0
h-index:
0
IGA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(08)
: L563
-
L566
[3]
GAINASP-INP SURFACE EMITTING INJECTION-LASERS
SODA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
SODA, H
IGA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
IGA, K
KITAHARA, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
KITAHARA, C
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN
SUEMATSU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(12)
: 2329
-
2330
[4]
YAMADA H, 1983, 1983 DRY PROC S TOKY, P73
[5]
YAMADA H, MICRO PROCESSING GAA, P591
←
1
→