Exploring semiconductor substrates for silicene epitaxy

被引:29
作者
Bhattacharya, Amrita [1 ]
Bhattacharya, Saswata [1 ]
Das, Gour P. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 32, India
关键词
BILAYER GRAPHENE; DYNAMICS; GAS;
D O I
10.1063/1.4821993
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have carried out first-principles density functional theory based calculations on electronic properties of silicene monolayer on various (111) semi-conducting surfaces. We find that the relative stability and other properties of the silicene overlayer depend sensitively on whether the interacting top layer of the substrate is metal or non-metal terminated. The nature of silicene-monolayer on the metal terminated surface can be metallic or even magnetic, depending upon the choice of the substrate. The silicene overlayer undergoes n-type doping on metal terminated surface while it undergoes p-type doping on nonmetal terminated surfaces of the semiconductor substrates. (C) 2013 AIP Publishing LLC.
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页数:4
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