A selective electrochemical approach to carbon nanotube field-effect transistors

被引:101
作者
Balasubramanian, K [1 ]
Sordan, R [1 ]
Burghard, M [1 ]
Kern, K [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
关键词
D O I
10.1021/nl049806d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Commercial fabrication of field-effect transistors (FETs) using carbon nanotubes has been hindered as all current production procedures yield a mixture of metallic and semiconducting tubes. Herein, we present a generic approach utilizing electrochemistry for selective covalent modification of metallic nanotubes, resulting in exclusive electrical transport through the unmodified semiconducting tubes. Toward this goal, the semiconducting tubes are rendered nonconductive by application of an appropriate gate voltage prior to the electrochemical modification. The FETs fabricated in this manner display good hole mobilities and a ratio approaching 10(6) between the current in the ON and OFF state.
引用
收藏
页码:827 / 830
页数:4
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共 25 条
  • [1] Carbon nanotube electronics
    Avouris, P
    Appenzeller, J
    Martel, R
    Wind, SJ
    [J]. PROCEEDINGS OF THE IEEE, 2003, 91 (11) : 1772 - 1784
  • [2] Electrical transport and confocal Raman studies of electrochemically modified individual carbon nanotubes
    Balasubramanian, K
    Friedrich, M
    Jiang, CY
    Fan, YW
    Mews, A
    Burghard, M
    Kern, K
    [J]. ADVANCED MATERIALS, 2003, 15 (18) : 1515 - +
  • [3] A route for bulk separation of semiconducting from metallic single-wall carbon nanotubes
    Chattopadhyay, D
    Galeska, L
    Papadimitrakopoulos, F
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (11) : 3370 - 3375
  • [4] Bulk separative enrichment in metallic or semiconducting single-walled carbon nanotubes
    Chen, ZH
    Du, X
    Du, MH
    Rancken, CD
    Cheng, HP
    Rinzler, AG
    [J]. NANO LETTERS, 2003, 3 (09) : 1245 - 1249
  • [5] Engineering carbon nanotubes and nanotube circuits using electrical breakdown
    Collins, PC
    Arnold, MS
    Avouris, P
    [J]. SCIENCE, 2001, 292 (5517) : 706 - 709
  • [6] Carbon nanotube memory devices of high charge storage stability
    Cui, JB
    Sordan, R
    Burghard, M
    Kern, K
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (17) : 3260 - 3262
  • [7] Carbon nanotube inter- and intramolecular logic gates
    Derycke, V
    Martel, R
    Appenzeller, J
    Avouris, P
    [J]. NANO LETTERS, 2001, 1 (09) : 453 - 456
  • [8] Controlling doping and carrier injection in carbon nanotube transistors
    Derycke, V
    Martel, R
    Appenzeller, J
    Avouris, P
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2773 - 2775
  • [9] High-mobility nanotube transistor memory
    Fuhrer, MS
    Kim, BM
    Durkop, T
    Brintlinger, T
    [J]. NANO LETTERS, 2002, 2 (07) : 755 - 759
  • [10] Ballistic carbon nanotube field-effect transistors
    Javey, A
    Guo, J
    Wang, Q
    Lundstrom, M
    Dai, HJ
    [J]. NATURE, 2003, 424 (6949) : 654 - 657