Effect of dead space on avalanche speed

被引：47

作者：

Ng, JS ^{[1
]}

Tan, CH ^{[1
]}

Ng, BK ^{[1
]}

Hambleton, PJ ^{[1
]}

David, JPR ^{[1
]}

Rees, GJ ^{[1
]}

You, AH ^{[1
]}

Ong, DS ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield, S Yorkshire, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

avalanche multiplication; avalanche photodiodes; frequency response; impact ionization;

D O I：

10.1109/16.992860

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of dead space (the minimum distance travelled by a carrier before acquiring enough energy to impact ionize) on the current impulse response and bandwidth of an avalanche multiplication process are obtained from a numerical model that maintains a constant carrier velocity but allows for a random distribution of impact ionization path lengths. The results show that the main mechanism responsible for the increase in response time with dead space is the increase in the number of carrier groups, which qualitatively describes the length of multiplication chains. When the dead space is negligible, the bandwidth follows the behavior predicted by Emmons but decreases as dead space increases.

引用

页码：544 / 549

页数：6

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