Texture formation in titanium nitride films prepared by chemical vapor deposition

被引:78
作者
Cheng, HE
Hon, MH
机构
[1] Department of Materials Science and Engineering, National Cheng Kung University, Tainan
关键词
D O I
10.1063/1.362358
中图分类号
O59 [应用物理学];
学科分类号
摘要
The [100], [110], and [211] textured TiN films were obtained in a chemical vapor deposition system using TiCl4, N-2, and H-2 as reaction gases. The microstructure of these textured films was investigated by scanning electron microscopy and transmission electron microscopy. The results show that the [211], [110], and [100] textured films consist of laminated twinned grains, multiply twinned grains, and nearly thermodynamic equilibrium grains respectively at the growing stage. The formation of these textures is discussed based on nucleation and growth mechanisms. At a lower deposition temperature with higher nitrogen concentration, the decahedral multiply twinned and laminated twinned crystals dominate over crystals with single crystalline structure. After competitive growth of these crystals, the multiply twinned crystals with [110] twin axis perpendicular to substrate surface survive. At an intermediate deposition temperature with lower nitrogen concentration, the laminated twinned crystals dominate the growth and the [211] orientation along the (111) twin planes possesses the fastest growth rate and form [211] textured films. At a higher deposition temperature above 1200 degrees C, the single crystalline structure dominates and forms [100] textured films. The effect of surface adsorption on texture formation is discussed. (C) 1996 American Institute of Physics.
引用
收藏
页码:8047 / 8053
页数:7
相关论文
共 43 条
[1]   EXPERIMENTAL-EVIDENCE FOR QUASIMELTING IN SMALL PARTICLES [J].
AJAYAN, PM ;
MARKS, LD .
PHYSICAL REVIEW LETTERS, 1989, 63 (03) :279-282
[2]  
Barret C., 1980, STRUCTURE METALS, P204
[3]   DISLOCATIONS AS GROWTH STEP SOURCES IN SOLUTION GROWTH AND THEIR INFLUENCE ON INTERFACE STRUCTURES [J].
BAUSER, E ;
STRUNK, H .
THIN SOLID FILMS, 1982, 93 (1-2) :185-194
[4]  
BHAT DG, 1993, SURFACE MODIFICATION, V6, P671
[5]   GROWTH-CHARACTERISTICS OF CVD BETA-SILICON CARBIDE [J].
CHENG, DJ ;
SHYY, WJ ;
KUO, DH ;
HON, MH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) :3145-3149
[6]   GROWTH-CHARACTERISTICS AND PROPERTIES OF TIN COATING BY CHEMICAL-VAPOR-DEPOSITION [J].
CHENG, HE ;
CHIANG, MJ ;
HON, MH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) :1573-1578
[7]   GROWTH-MECHANISM OF STAR-SHAPED TIN CRYSTALS [J].
CHENG, HE ;
HON, MH .
JOURNAL OF CRYSTAL GROWTH, 1994, 142 (1-2) :117-123
[8]   PREFERRED STRUCTURES IN SMALL PARTICLES [J].
DORAISWAMY, N ;
MARKS, LD .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 71 (03) :291-310
[9]   BONDING STUDY OF TIC AND TIN .1. HIGH-PRECISION X-RAY-DIFFRACTION DETERMINATION OF THE VALENCE-ELECTRON DENSITY DISTRIBUTION, DEBYE-WALLER TEMPERATURE FACTORS, AND ATOMIC STATIC DISPLACEMENTS IN TIC0.94 AND TIN0.99 [J].
DUNAND, A ;
FLACK, HD ;
YVON, K .
PHYSICAL REVIEW B, 1985, 31 (04) :2299-2315
[10]   TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF GROWTH AND INTERFACE STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED TIC AND TIN FILMS ON WC-CO ALLOY SUBSTRATES [J].
ECHIGOYA, J ;
LIU, ZT ;
IMAMURA, A ;
TAKATSU, S .
THIN SOLID FILMS, 1991, 198 (1-2) :293-300