Microstructural evolution induced by scanned laser annealing in Al interconnects

被引:9
作者
Hau-Riege, CS [1 ]
Thompson, CV [1 ]
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
关键词
D O I
10.1063/1.124726
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method has been developed for inducing controlled microstructural evolution in thin films patterned into lines, using scanned laser annealing (SLA). Experimental studies show at least three distinct types of microstructures resulting from SLA, depending on the scan rate and laser power. Starting with a polygranular initial microstructure, scanned laser annealing leads to either a large-grained polygranular structure, a bamboo structure, or an agglomerated structure. Microstructural evolution induced by SLA was found to lead to different evolution than conventional annealing, as well as to produce unique large-grained "bamboo" structures. Simulations of SLA further suggest the possibility of producing near-single crystal microstructures under properly controlled conditions. (C) 1999 American Institute of Physics. [S0003-6951(99)01836-7].
引用
收藏
页码:1464 / 1466
页数:3
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