Strain relaxation and its effect in exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates

被引：65

作者：

Ashrafi, ABMA ^{[1
]}

Binh, NT ^{[1
]}

Zhang, BP ^{[1
]}

Segawa, Y ^{[1
]}

机构：

[1] Inst Phys & Chem Res, Photodynam Res Ctr, Lab Photophys, Sendai, Miyagi 9800845, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期

关键词：

D O I：

10.1063/1.1705722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thickness-dependent strain relaxation and its role on exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates have been studied. The magnitudes of strain were determined experimentally by x-ray diffraction measurements. The strain ratios under biaxial stresses (Deltac/c(0))/(Deltaa/a(0)) of epitaxial ZnO layers grown on SiC and Al2O3 substrates were estimated to be 0.38 and 0.50, respectively. The strain-induced band shift deltaE(A)/deltaepsilon(zz) for ZnO/SiC and ZnO/Al2O3 heterostructures was analyzed by photoluminescence with the values of 13.1 and 14.6 eV, respectively. These comparative strain-induced band shifts, as well as Poisson ratios, evidenced the role of lattice deformation kinetics induced by different lattice mismatches in the ZnO/SiC and ZnO/Al2O3 heterostructures. (C) 2004 American Institute of Physics.

引用

页码：2814 / 2816

页数：3

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