TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey

被引：6

作者：

Nguyen, C. D. ^{[1
]}

Pham, A. T. ^{[1
]}

Jungemann, C. ^{[1
]}

Meinerzhagen, B. ^{[1
]}

机构：

[1] TU Braunschweig, NST, D-38023 Braunschweig, Germany

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2004年 / 3卷 / 3-4期

关键词：

heterostructures; quantization effects; inversion layer; band offsets;

D O I：

10.1007/s10825-004-7043-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we study the charge distribution in the inversion layer of a strained Si/strained Si1-xGex dual channel pMOSFET on relaxed Si1-yGey. First, the size quantization of the two-dimensional hole gas (2 DHG) in the strained layers is discussed based on the Schrodinger equation with a complete description of the valence band structure using the k . p-method (KPSE). Second, the heterojunction valence band offsets needed for modeling in commercial TCAD device simulators are estimated for the first time from the results of the KPSE.

引用

页码：193 / 197

页数：5

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