Growth of ZnO on sapphire (0001) by the vapor phase epitaxy using a chloride source

被引：23

作者：

Takahashi, N

Kaiya, K

Nakamura, T

Momose, Y

Yamamoto, H

机构：

[1] Shizuoka Univ, Dept Mat Sci, Hamamatsu, Shizuoka 4328561, Japan

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328561, Japan

[3] Tokyo Engn Univ, Dept Elect, Hachioji, Tokyo 1928580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 4B期

关键词：

ZnO; VPE; ZnCl2; O-2 sapphire (0001);

D O I：

10.1143/JJAP.38.L454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc oxide (ZnO) films were deposited on sapphire (0001) substrates by vapor phase epitaxy using ZnCl2 as a chloride source. The X-ray diffractogram showed a typical pattern of epitaxially grown ZnO with a hexagonal structure, and a full width at half-maximum (FWHM) of 23.3 min was obtained in the X-ray diffraction profile. Growth rate of the ZnO film increased with increasing growth temperature, the growth rate varied from 0.5 to 3.0 mu m/h. A strong band edge emission at 370.0 nm was observed at 20 K photoluminescence spectra.

引用

页码：L454 / L456

页数：3

共 9 条

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