MOS noise performance under impedance matching constraints

被引：9

作者：

Janssens, J ^{[1
]}

Steyaert, H ^{[1
]}

机构：

[1] Katholieke Univ Leuven, ESATMICAS, B-3001 Heverlee, Belgium

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 15期

关键词：

D O I：

10.1049/el:19990837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOS noise performance under source matching constraints is analysed for an improved impedance matching scheme, using both classical and non-quasistatic noise models. The tradeoff between achieving a low noise figure and a high power gain when preserving a source match is investigated and clarified.

引用

页码：1278 / 1280

页数：3