0.85-mu m vertical-cavity surface-emitting laser diode arrays grown on p-type GaAs substrate

被引：13

作者：

Kohama, Y

Ohiso, Y

Tateno, K

Kurokawa, T

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa 243-01

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 03期

关键词：

semiconductor laser arrays;

D O I：

10.1109/68.556046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated the first room-temperature (RT) continuous-wave (CW) 0.85-mu m 8 x 8 bottom-emitting vertical-cavity surface-emitting laser diode (VCSEL) arrays on a p-type GaAs substrate, which are applicable to optical interconnection. The laser characteristics are slightly inferior to those of VCSEL arrays made on n-type GaAs substrate with the same reflectivity, but exhibit for better array uniformity of threshold current density than previously reported. Such devices are applicable to N-MOS integration.

引用

页码：280 / 281

页数：2

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[2]

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[4]

Hahn K. H., 1995, OFC '95 Optical Fiber Communication. Summaries of Papers Presented at the Conference on Optical Fiber Communication. Vol.8. 1995 Technical Digest Series. Postconference Edition

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