Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films

被引：30

作者：

Chang, CY

Lin, HY

Lei, TF

Cheng, JY

Chen, LP

Dai, BT

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN

[2] NATL NANO DEVICE LABS,HSINCHU 300,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 03期

关键词：

D O I：

10.1109/55.485180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP), In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm(2)/V-s, ON/OFF current ratio of 1.110(7), and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's.

引用

收藏

页码：100 / 102

页数：3

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