CHARACTERISTICS OF PLASMA-ENHANCED-CHEMICAL-VAPOR-DEPOSITION TETRAETHYLORTHOSILICATE OXIDE AND THIN-FILM-TRANSISTOR APPLICATION

被引：28

作者：

NISHI, Y ^{[1
]}

FUNAI, T ^{[1
]}

IZAWA, H ^{[1
]}

FUJIMOTO, T ^{[1
]}

MORIMOTO, H ^{[1
]}

ISHII, M ^{[1
]}

机构：

[1] GIANT ELECTR TECHNOL CORP,CHUO KU,TOKYO 103,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

SILICON DIOXIDE; TETRAETHYLORTHOSILICATE; PECVD METHOD; SI-OH IN OXIDE; MOS CAPACITOR; POLY-SI TFT;

D O I：

10.1143/JJAP.31.4570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to make application to the low-temperature thin-film-transistor (TFT) process possible, the deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was investigated. It was shown that the oxide films with low Si-OH content had good electrical properties: for example, low interface state density of 5 x 10(10) cm-2 eV-1 and high breakdown strength of 8 MV/cm. In addition, polycrystalline-silicon (poly-Si) TFT's employing TEOS-SiO2 films as gate insulators were fabricated and examined. It was confirmed that the TEOS-PECVD method was a promising method for forming gate insulators. This paper reports on TEOS-SiO2 films and poly-Si TFT's.

引用

页码：4570 / 4573

页数：4

共 13 条

[1] LOW-PRESSURE DEPOSITION OF HIGH-QUALITY SIO2-FILMS BY PYROLYSIS OF TETRAETHYLORTHOSILICATE [J].