ANALYTICAL MODEL FOR THE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SIO2 FROM TETRAETHOXYSILANE

被引：31

作者：

KALIDINDI, SR ^{[1
]}

DESU, SB ^{[1
]}

机构：

[1] VIRGINIA POLYTECH INST & STATE UNIV,DEPT MAT ENGN,BLACKSBURG,VA 24061

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 02期

关键词：

D O I：

10.1149/1.2086518

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A theoretical model utilizing finite element methods is proposed to analyze low pressure chemical vapor deposition of SiO2 by pyrolysis of tetraethoxysilane (TEOS). This model incorporates both the homogeneous gas-phase reactions and the heterogeneous surface processes. The predicted values from the proposed model agreed very well with the experimental results. Besides accurately predicting the experimental data we have also estimated the forward and backward reaction rate constants for the gas-phase equilibrium reaction of TEOS. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：624 / 628

页数：5

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