MODELING AND ANALYSIS OF LOW-PRESSURE CVD REACTORS

[1] ARIS R, 1975, MATH THEORY REACTION

[2] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[3] THE DEPOSITION OF SILICON FROM SILANE IN A LOW-PRESSURE HOT-WALL SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 259 - 266

[4] DITTMAN FW, 1974, ADV CHEM SER, V133, P463

[5] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[6] QUANTITATIVE CALCULATION OF GROWTH-RATE OF EPITAXIAL SILICON FROM SICL4 IN A BARREL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1106 - &

[7] GIESKE RJ, 1977, CHEM VAPOR DEPOSITIO, P151

[8] POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR [J]. THIN SOLID FILMS, 1979, 59 (02) : 231 - 247

[9] THE BIFURCATION BEHAVIOR OF TUBULAR REACTORS [J]. CHEMICAL ENGINEERING SCIENCE, 1982, 37 (02) : 199 - 222

[10] MODELING OF LOW-PRESSURE CVD PROCESSES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2288 - 2291

[1] ARIS R, 1975, MATH THEORY REACTION

[2] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[3] THE DEPOSITION OF SILICON FROM SILANE IN A LOW-PRESSURE HOT-WALL SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 259 - 266

[4] DITTMAN FW, 1974, ADV CHEM SER, V133, P463

[5] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[6] QUANTITATIVE CALCULATION OF GROWTH-RATE OF EPITAXIAL SILICON FROM SICL4 IN A BARREL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1106 - &

[7] GIESKE RJ, 1977, CHEM VAPOR DEPOSITIO, P151

[8] POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR [J]. THIN SOLID FILMS, 1979, 59 (02) : 231 - 247

[9] THE BIFURCATION BEHAVIOR OF TUBULAR REACTORS [J]. CHEMICAL ENGINEERING SCIENCE, 1982, 37 (02) : 199 - 222

[10] MODELING OF LOW-PRESSURE CVD PROCESSES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2288 - 2291