ION AND CHEMICAL RADICAL EFFECTS ON THE STEP COVERAGE OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION TETRAETHYLORTHOSILICATE FILMS

被引：69

作者：

CHANG, CP

PAI, CS

HSIEH, JJ

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.345546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have compared the step coverage of plasma enhanced chemical vapor deposition tetraethylorthosilicate films of microwave downstream, high frequency radio frequency (rf), and low frequency rf depositions. The microwave-downstream deposition, characterized by bimolecular surface reactions, produces a conformal step coverage. The rf depositions with ion-induced surface reactions produce a low sidewall, high bottom coverage. The chemical radical and the ion effects on the step coverage are discussed.

引用

页码：2119 / 2126

页数：8

共 21 条

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