FREQUENCY-EFFECTS AND PROPERTIES OF PLASMA DEPOSITED FLUORINATED SILICON-NITRIDE

被引：11

作者：

CHANG, CP

FLAMM, DL

IBBOTSON, DE

MUCHA, JA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：524 / 532

页数：9

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