FLUORINATED CHEMISTRY FOR HIGH-QUALITY, LOW HYDROGEN PLASMA-DEPOSITED SILICON-NITRIDE FILMS

被引：37

作者：

CHANG, CP

FLAMM, DL

IBBOTSON, DE

MUCHA, JA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1406 / 1415

页数：10

相关论文

共 42 条

[1] ADAMS AC, 1986, PLASMA DEPOSITED THI, P129
[2] CALCULATION OF HEATS OF FORMATION AND DISSOCIATION OF METHYL-SUBSTITUTED AND CHLORO-SUBSTITUTED DISILANES
BELL, TN
PERKINS, KA
PERKINS, PG
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (20) : 3922 - 3925
[3] INFLUENCE OF ALKALI AND HALOGEN IMPLANTATION ON ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON
BEYER, W
STRITZKER, B
WAGNER, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 321 - 326
[4] FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON
CHANG, RPH
CHANG, CC
DARACK, S
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 999 - 1002
[5] CHANG RPH, 1981, Patent No. 4300989
[6] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY
COBURN, JW
CHEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136
[7] DEPENDENCE OF F-ATOM DENSITY ON PRESSURE AND FLOW-RATE IN CF4 GLOW-DISCHARGES AS DETERMINED BY EMISSION-SPECTROSCOPY
COBURN, JW
CHEN, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 353 - 356
[8] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES
DAGOSTINO, R
CRAMAROSSA, F
DEBENEDICTIS, S
FERRARO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265
[9] EFFECTS OF FREQUENCY ON OPTICAL-EMISSION, ELECTRICAL, ION, AND ETCHING CHARACTERISTICS OF A RADIO-FREQUENCY CHLORINE PLASMA
DONNELLY, VM
FLAMM, DL
BRUCE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2135 - 2144
[10] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE
DUN, H
PAN, P
WHITE, FR
DOUSE, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1555 - 1563

← 1 2 3 4 5 →