FLUORINATED CHEMISTRY FOR HIGH-QUALITY, LOW HYDROGEN PLASMA-DEPOSITED SILICON-NITRIDE FILMS

被引：37

作者：

CHANG, CP

FLAMM, DL

IBBOTSON, DE

MUCHA, JA

机构：

来源：

关键词：

D O I：

10.1063/1.339645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1406 / 1415

页数：10

共 42 条

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[37] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION
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LEVINSTEIN, HJ
SMITH, TE
QUINTANA, G
HASZKO, SE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 601 - 608
[38] STULL DR, 1971, NSRDSNBS37
[39] STULL DR, 1985, NSRDSNBS37 S
[40] SUN RC, 1980, P INT RELIABILITY PH, P244