The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT

被引：9

作者：

Lindner, A

Velling, P

Prost, W

Wiersch, A

Kuphal, E

Burchard, A

Magerle, R

Deicher, M

Tegude, FJ

机构：

[1] GERHARD MERCATOR UNIV DUISBURG,SONDERFORSCHUNGSBEREICH SFB 254,DEPT SOLID STATE ELECT,D-47057 DUISBURG,GERMANY

[2] DEUTSCH TELEKOM RES INST,D-64295 DARMSTADT,GERMANY

[3] UNIV KONSTANZ,FAK PHYS,D-78434 CONSTANCE,GERMANY

[4] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

VAPOR-PHASE EPITAXY;

D O I：

10.1016/S0022-0248(96)00590-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Hydrogen radicals are decisive for the low temperature growth and carbon doping of In0.53Ga0.47As in LP-MOVPE. This is demonstrated for the growth of highly p-type doped In0.53Ga0.47As layers with CCl4 as dopant source. Perturbed angular correlation measurements (PAC) were used to investigate the passivation of accepters by hydrogen in low-temperature grown In0.53Ga0.47As. Based on the above analysis an InP-based layer stack is developed which employs low-temperature growth of the base layer, high-temperature growth of the remaining HBT layers, and an in situ post-growth annealing under TMAs/N-2 ambient.

引用

页码：287 / 291

页数：5

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