Optical and structural properties of reactive ion beam sputter deposited CeO2 films

被引:96
作者
Kanakaraju, S
Mohan, S
Sood, AK
机构
[1] INDIAN INST SCI,DEPT INSTRUMENTAT,BANGALORE 560012,KARNATAKA,INDIA
[2] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
关键词
optical properties; Raman scattering; sputtering; structural properties; X-ray diffraction;
D O I
10.1016/S0040-6090(97)00081-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical and structural properties of reactive ion beam sputter deposited CeO2 films as a function of oxygen partial pressures (P-O2) and substrate temperatures (T-s) have been investigated. The films deposited at ambient temperature with P-O2 of 0.01 Pa have shown a refractive index of 2.36 which increased to 2.44 at 400 degrees C. Refractive index and extinction coefficient are sensitive up to a T-s of similar to 200 degrees C. Raman spectroscopy and X-ray diffraction (XRD) have been used to characterise the structural properties. A preferential orientation of (220) was observed up to a T-s of 200 degrees C and it changed to (200) at 400 degrees C: and above. Raman line broadening, peak shift and XRD broadening indicate the formation of nanocrystalline phase for the films deposited up to a substrate temperature of 300 degrees C. However, crystallinity of the films were better for T-s values above 300 degrees C. In general both optical and structural properties were unusual compared to the films deposited by conventional electron beam evaporation, but were similar in some aspects to those deposited by ion-assisted deposition. Apart from thermal effects, this behavior is also attributed to the bombardment of backscattered ions/neutrals on the growing film as well as the higher kinetic energy of the condensing species, together resulting in increased packing density. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:191 / 195
页数:5
相关论文
共 21 条
[1]   OPTICAL-PROPERTIES OF ION ASSISTED DEPOSITED CEO2 FILMS [J].
ALROBAEE, MS ;
KRISHNA, MG ;
RAO, KN ;
MOHAN, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (06) :3048-3053
[2]   INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE PROPERTIES OF OXYGEN-ION-ASSISTED DEPOSITED CEO2 FILMS [J].
ALROBAEE, MS ;
RAO, KN ;
MOHAN, S .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) :2380-2386
[3]  
Cevro M., 1995, J PHYS D, V28, P1962
[4]   REACTION AND REGROWTH CONTROL OF CEO2 ON SI(111) SURFACE FOR THE SILICON-ON-INSULATOR STRUCTURE [J].
CHIKYOW, T ;
BEDAIR, SM ;
TYE, L ;
ELMASRY, NA .
APPLIED PHYSICS LETTERS, 1994, 65 (08) :1030-1032
[5]   EVOLUTION OF OPTICAL THIN-FILMS BY SPUTTERING [J].
COLEMAN, WJ .
APPLIED OPTICS, 1974, 13 (04) :946-951
[6]   NUCLEATION OF HOMOEPITAXIAL FILMS GROWN WITH ION ASSISTANCE ON PT(111) [J].
ESCH, S ;
BOTT, M ;
MICHELY, T ;
COMSA, G .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3209-3211
[7]  
Graham W. G., 1988, J CATAL, V130, P310
[8]   NUCLEATION AND INITIAL GROWTH OF IN DEPOSITED ON SI3N4 USING LOW-ENERGY (LESS-THAN-OR-EQUAL-TO-300 EV) ACCELERATED BEAMS IN ULTRAHIGH-VACUUM [J].
HASAN, MA ;
BARNETT, SA ;
SUNDGREN, JE ;
GREENE, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1883-1887
[9]   EFFECT OF ION-BOMBARDMENT DURING DEPOSITION ON THE X-RAY MICROSTRUCTURE OF THIN SILVER FILMS [J].
HUANG, TC ;
LIM, G ;
PARMIGIANI, F ;
KAY, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2161-2166
[10]  
IONUE T, 1991, APPL PHYS LETT, V59, P3604