NUCLEATION AND INITIAL GROWTH OF IN DEPOSITED ON SI3N4 USING LOW-ENERGY (LESS-THAN-OR-EQUAL-TO-300 EV) ACCELERATED BEAMS IN ULTRAHIGH-VACUUM

被引：43

作者：

HASAN, MA

BARNETT, SA

SUNDGREN, JE

GREENE, JE

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574478

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1883 / 1887

页数：5

共 11 条

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