A LOW-ENERGY, ULTRAHIGH-VACUUM, SOLID-METAL ION-SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR-BEAM EPITAXY

被引：36

作者：

ROCKETT, A

BARNETT, SA

GREENE, JE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

19

引用

收藏

页码：306 / 313

页数：8

相关论文

共 19 条

[1] ADSORPTION OF ZN ON GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1973, 38 (02) : 394 - 412
[2] ION-BEAM DIVERGENCE CHARACTERISTICS OF 2-GRID ACCELERATOR SYSTEMS
ASTON, G
KAUFMAN, HR
WILBUR, PJ
[J]. AIAA JOURNAL, 1978, 16 (05) : 516 - 524
[3] MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY
BAJOR, G
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1579 - 1582
[4] MECHANISMS OF EPITAXIAL GAAS CRYSTAL-GROWTH BY SPUTTER DEPOSITION - ROLE OF ION SURFACE INTERACTIONS
BARNETT, SA
GREENE, JE
[J]. SURFACE SCIENCE, 1983, 128 (2-3) : 401 - 416
[5] LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE
BEAN, JC
DINGLE, R
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (12) : 925 - 927
[6] CHILD CD, 1914, PHYS REV, V32, P1257
[7] DUSHMAN S, 1962, SCI F VACUUM TECHNIQ
[8] INTENSE ION-BEAMS
GREEN, TS
[J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (10) : 1257 - +
[9] ION-BEAM OXIDATION
HARPER, JME
HEIBLUM, M
SPEIDELL, JL
CUOMO, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4118 - 4121
[10] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554