Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys

被引:24
作者
Ernst, P
Zhang, Y
Driessen, FAJM
Mascarenhas, A
Jones, ED
Geng, C
Scholz, F
Schweizer, H
机构
[1] NATL RENEWABLE ENERGY LAB, GOLDEN, CO 80401 USA
[2] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
关键词
D O I
10.1063/1.363938
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence measurements in a magnetic field between 0 and 13.6 T were carried out on CuPtB-ordered GaInP at liquid-helium temperature. Four samples of different degrees of ordering (eta, varying from 0 to 0.54) were studied. Experimental results show that the ordering not only induces a band-gap reduction and valence-band splitting, it also causes changes in effective masses and an effective mass anisotropy. By measuring and analyzing the magnetoluminescence with the magnetic field aligned along both ordering (the [(1) over bar 11]) and growth (the [001]) directions, we demonstrate that, for the band-edge excitonic state, the reduced mass in the plane perpendicular to the ordering direction is smaller than that in the ordering direction and also smaller than that of a disordered ahoy. The exciton binding energy is found nearly independent of the degree of ordering, in agreement with theoretical predictions. (C) 1997 American Institute of Physics.
引用
收藏
页码:2814 / 2817
页数:4
相关论文
共 17 条
[1]   EVIDENCE FOR SPATIALLY INDIRECT RECOMBINATION IN GA0.52IN0.48P [J].
DELONG, MC ;
OHLSEN, WD ;
VIOHL, I ;
TAYLOR, PC ;
OLSON, JM .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2780-2787
[2]  
Dimmock J. O., 1967, SEMICONDUCT SEMIMET, V3, P259
[3]   CYCLOTRON-RESONANCE STUDIES OF GAINP AND ALGAINP [J].
EMANUELSSON, P ;
DRECHSLER, M ;
HOFMANN, DM ;
MEYER, BK ;
MOSER, M ;
SCHOLZ, F .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2849-2851
[4]   BAND-GAP REDUCTION AND VALENCE-BAND SPLITTING OF ORDERED GAINP2 [J].
ERNST, P ;
GENG, C ;
SCHOLZ, F ;
SCHWEIZER, H ;
ZHANG, Y ;
MASCARENHAS, A .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2347-2349
[5]   Ordering in GaInP2 studied by optical spectroscopy [J].
Ernst, P ;
Geng, C ;
Scholz, F ;
Schweizer, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (01) :213-229
[6]   EFFECTS OF ORDERING ON THE ELECTRON EFFECTIVE-MASS AND STRAIN DEFORMATION POTENTIAL IN GAINP2 - DEFICIENCIES OF THE K-CENTER-DOT-P MODEL [J].
FRANCESCHETTI, A ;
WEI, SH ;
ZUNGER, A .
PHYSICAL REVIEW B, 1995, 52 (19) :13992-13997
[7]   OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].
GOMYO, A ;
SUZUKI, T ;
IIJIMA, S .
PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648
[8]  
Jones E. D., 1993, Semiconductor Heterostructures for Photonic and Electronic Applications Symposium, P61
[9]   MAGNETIC-FIELD-DEPENDENT EXCITONIC PHOTOLUMINESCENCE LINEWIDTH IN IN0.48GA0.52P SEMICONDUCTOR ALLOYS [J].
JONES, ED ;
SCHNEIDER, RP ;
LEE, SM ;
BAJAJ, KK .
PHYSICAL REVIEW B, 1992, 46 (11) :7225-7228
[10]   THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].
KITTEL, C ;
MITCHELL, AH .
PHYSICAL REVIEW, 1954, 96 (06) :1488-1493