High electron mobility in well ordered and lattice-strained hydrogenated nanocrystalline silicon

被引：21

作者：

Chen, XY ^{[1
]}

Shen, WZ ^{[1
]}

Chen, H ^{[1
]}

Zhang, R ^{[1
]}

He, YL ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 02期

关键词：

D O I：

10.1088/0957-4484/17/2/042

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the realization of high electron mobility (over 10(3) cm(2) V-1 s(-1)) in structure-ordered and lattice-strained hydrogenated nanocrystalline silicon (nc-Si:H) due to the decrease of conduction effective mass and phonon scattering. The nc-Si:H thin films were grown on crystalline silicon substrates by plasma-enhanced chemical vapour deposition through the radio-frequency power to properly control the chemical reactions of H atoms with the Si-Si network. The electron mobility and concentration in the nc-Si:H have been extracted with the aid of magnetic-field-dependent Hall effect measurements. X-ray diffraction, Raman, and infrared transmission experiments have been employed to yield information about the lattice strain and structural order in the Si nanocrystals. The room-temperature experimental mobility has been well explained by a generalized Drude transport model unifying both the diffusive and ballistic transport mechanisms.

引用

页码：595 / 599

页数：5

共 29 条

[1]

[Anonymous], 1981, PHYS SEMICONDUCTORS

[2] DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE [J].

BECK, WA ;

ANDERSON, JR .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :541-544

[3]

BROSKY MH, 1977, PHYS REV B, V16, P3356

[4] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[5] Controlling the electronic band structures in hydrogenated silicon nanocrystals by shallow impurity doping [J].

Chen, XY ;

Shen, WZ .

PHYSICAL REVIEW B, 2005, 72 (03)

[6] Enhancement of electron mobility in nanocrystalline silicon crystalline silicon heterostructures [J].

Chen, XY ;

Shen, WZ ;

He, YL .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)

[7] Observation of low-dimensional state tunneling in nanocrystalline silicon/crystalline silicon heterostructures [J].

Chen, XY ;

Shen, WZ .

APPLIED PHYSICS LETTERS, 2004, 85 (02) :287-289

[8] Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C [J].

Cheng, IC ;

Wagner, S .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :440-442

[9] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

[10] STRUCTURAL CHARACTERIZATION OF NANOMETER-SIZED CRYSTALLINE PD BY X-RAY-DIFFRACTION TECHNIQUES [J].

FITZSIMMONS, MR ;

EASTMAN, JA ;

MULLERSTACH, M ;

WALLNER, G .

PHYSICAL REVIEW B, 1991, 44 (06) :2452-2460

← 1 2 3 →