High electron mobility in well ordered and lattice-strained hydrogenated nanocrystalline silicon

被引：21

作者：

Chen, XY ^{[1
]}

Shen, WZ ^{[1
]}

Chen, H ^{[1
]}

Zhang, R ^{[1
]}

He, YL ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 02期

关键词：

D O I：

10.1088/0957-4484/17/2/042

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the realization of high electron mobility (over 10(3) cm(2) V-1 s(-1)) in structure-ordered and lattice-strained hydrogenated nanocrystalline silicon (nc-Si:H) due to the decrease of conduction effective mass and phonon scattering. The nc-Si:H thin films were grown on crystalline silicon substrates by plasma-enhanced chemical vapour deposition through the radio-frequency power to properly control the chemical reactions of H atoms with the Si-Si network. The electron mobility and concentration in the nc-Si:H have been extracted with the aid of magnetic-field-dependent Hall effect measurements. X-ray diffraction, Raman, and infrared transmission experiments have been employed to yield information about the lattice strain and structural order in the Si nanocrystals. The room-temperature experimental mobility has been well explained by a generalized Drude transport model unifying both the diffusive and ballistic transport mechanisms.

引用

页码：595 / 599

页数：5

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