Acousto-optic diffraction of blue and red light in GaN

被引:16
作者
Ciplys, D [1 ]
Rimeika, R
Shur, MS
Gaska, R
Deng, J
Yang, JW
Khan, MA
机构
[1] Rensselaer Polytech Inst, Dept ECSE, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, CIEEM, Troy, NY 12180 USA
[3] Sensor Elect Technol Inc, Latham, NY 12110 USA
[4] Univ S Carolina, Dept ECE, Columbia, SC 29208 USA
关键词
D O I
10.1063/1.1458690
中图分类号
O59 [应用物理学];
学科分类号
摘要
The diffraction of guided optical waves on surface acoustic waves in a GaN layer grown by metalorganic chemical-vapor deposition on a (0001) sapphire substrate has been experimentally studied. The measurements have been performed at optical wavelengths 442 and 633 nm for the acoustic wavelength of 16 mum. The acousto-optic diffraction regime was close to the pure Bragg diffraction regime. The advantage of considerably lower acoustic power required at the shorter optical wavelength for diffraction is demonstrated. Our results show the potential of GaN-based structures for the development of blue acousto-optical devices. (C) 2002 American Institute of Physics.
引用
收藏
页码:1701 / 1703
页数:3
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