Naturally formed GaAs quantum dots

被引：3

作者：

Gammon, D

Snow, ES

Katzer, DS

机构：

[1] Naval Research Laboratory, Washington

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

关键词：

gallium arsenide; photoluminescence; quantum dots; quantum wells; semiconductor-semiconductor heterostructures;

D O I：

10.1016/0039-6028(96)00540-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A photoluminescence study of the excitons localized in the quantum dots naturally formed by interface roughness in narrow GaAs quantum wells is presented. By reducing the number of dots probed in a resonant excitation measurement, we study the spectra of single quantum dots. Extremely narrow linewidths for both the ground and excited states are measured. With such narrow lines it is possible to measure the thermal broadening due to acoustic phonons.

引用

页码：814 / 817

页数：4

共 9 条

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