EXCITONS, PHONONS, AND INTERFACES IN GAAS/ALAS QUANTUM-WELL STRUCTURES

被引：138

作者：

GAMMON, D

SHANABROOK, BV

KATZER, DS

机构：

[1] Naval Research Laboratory, Washington

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.67.1547

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report photoluminescence and resonant-Raman-scattering studies of single GaAs/AlAs quantum-well structures. Splittings in the exciton peaks show that there is a large-scale island structure at the interfaces. Shifts in the absolute exciton energies of quantum wells grown at different substrate temperatures and also the form of the optical-phonon energies as a function of both mode index and quantum-well width indicate that there also exists a small-scale structure on the interfaces.

引用

页码：1547 / 1550

页数：4

共 14 条

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