RAMAN-SCATTERING CHARACTERIZATION OF INTERFACE BROADENING IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：92

作者：

JUSSERAND, B

ALEXANDRE, F

PAQUET, D

LEROUX, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：301 / 303

页数：3

共 10 条

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