Interband impact ionization by terahertz illumination of InAs heterostructures

被引：93

作者：

Markelz, AG

Asmar, NG

Brar, B

Gwinn, EG

机构：

[1] UNIV CALIF SANTA BARBARA, DEPT PHYS, SANTA BARBARA, CA 93106 USA

[2] UNIV CALIF SANTA BARBARA, DEPT ELECT & COMP ENGN, SANTA BARBARA, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 26期

关键词：

D O I：

10.1063/1.117842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which omega tau(m) similar to 1, where tau(m) is the momentum relaxation time, and f=omega/2 pi is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz. (C) 1996 American Institute of Physics.

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页码：3975 / 3977

页数：3

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