Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy

被引：118

作者：

Ambacher, O ^{[1
]}

Rieger, W ^{[1
]}

Ansmann, P ^{[1
]}

Angerer, H ^{[1
]}

Moustakas, TD ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] BOSTON UNIV, DEPT ELECT COMP & SYST ENGN, MOLEC BEAM EPITAXY LAB, BOSTON, MA 02215 USA

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 05期

关键词：

semiconductor; epitaxy; light absorption;

D O I：

10.1016/0038-1098(95)00658-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photothermal Deflection Spectroscopy (PDS) is used to study the sub-bandgap absorption of hexagonal gallium nitride (GaN) in the energy range from 0.6 to 3.8 eV. Auto-, n- and p-doped GaN layers deposited by chemical vapour deposition from organometallic precursors (MOCVD) or electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) are measured to investigate the optical band edge, the sub-bandgap absorption and the absorption due to free carriers. PDS is also useful to study the long term and thermal stability of GaN. Changes in sub-bandgap absorption by heating the samples to 600 degrees C for several hours are presented.

引用

页码：365 / 370

页数：6

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