Catalyst-Free Plasma Enhanced Growth of Graphene from Sustainable Sources

被引：115

作者：

Jacob, Mohan V. ^{[1
]}

Rawat, Rajdeep S. ^{[2
]}

Ouyang, Bo ^{[2
]}

Bazaka, Kateryna ^{[1
]}

Kumar, D. Sakthi ^{[3
]}

Taguchi, Dai ^{[4
]}

Iwamoto, Mitsumasa ^{[4
]}

Neupane, Ram ^{[5
]}

Varghese, Oomman K. ^{[5
]}

机构：

[1] James Cook Univ, Coll Sci Technol & Engn, Elect Mat Lab, Townsville, Qld 4811, Australia

[2] Nanyang Technol Univ, Natl Inst Educ, Nat Sci & Sci Educ, Singapore 637616, Singapore

[3] Toyo Univ, Bio Nano Elect Res Ctr, Grad Sch Interdisciplinary New Sci, Kawagoe, Saitama 3508585, Japan

[4] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[5] Univ Houston, Dept Phys, Nanomat & Devices Lab, Houston, TX 77204 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 09期

关键词：

graphene; PECVD; hydrophobic; memristor; 2ND-HARMONIC GENERATION MEASUREMENT; RAMAN-SPECTROSCOPY; LINALYL ACETATE; CARBON-SOURCES; PECVD GROWTH; SURFACE; LAYER; FILMS; WETTABILITY; TEMPERATURE;

D O I：

10.1021/acs.nanolett.5b01363

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Details of a fast and sustainable bottom-up process to grow large area high quality graphene films without the aid of any catalyst are reported in this paper. We used Melaleuca alternifolia, a volatile natural extract from tea tree plant as the precursor. The as-fabricated graphene films yielded a stable contact angle of 135 degrees, indicating their potential application in very high hydrophobic coatings. The electronic devices formed by sandwiching pentacene between graphene and aluminum films demonstrated memristive behavior, and hence, these graphene films could find use in nonvolatile memory devices also.

引用

页码：5702 / 5708

页数：7

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