Edge-emitting lasers with short-period semiconductor air distributed Bragg reflector mirrors

被引：63

作者：

Yuan, Y ^{[1
]}

Brock, T ^{[1
]}

Bhattacharya, P ^{[1
]}

Caneau, C ^{[1
]}

Bhat, R ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期

关键词：

semiconductor lasers;

D O I：

10.1109/68.593332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a short-cavity edge-emitting 0.98-mu m GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE). The dc and small-signal modulation properties of 100-mu m-long lasers have been measured and are characterized by I-th = 4.5 mA and f(-3 dB) = 30 GHz under pulsed conditions, respectively. The far-field pattern of light emanating from the DBR is also measured.

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收藏

页码：881 / 883

页数：3

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