Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In0.35Ga0.65As-GaAs multiple-quantum-well lasers

被引：70

作者：

Weisser, S ^{[1
]}

Larkins, EC ^{[1
]}

Czotscher, K ^{[1
]}

Benz, W ^{[1
]}

Daleiden, J ^{[1
]}

Esquivias, I ^{[1
]}

Fleissner, J ^{[1
]}

Ralston, JD ^{[1
]}

Romero, B ^{[1
]}

Sah, RE ^{[1
]}

Schonfelder, A ^{[1
]}

Rosenzweig, J ^{[1
]}

机构：

[1] UNIV POLITECN MADRID,DEPT TECNOL FOTON,E-28040 MADRID,SPAIN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 05期

关键词：

D O I：

10.1109/68.491554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate record direct modulation bandwidths from MBE-grown In0.5Ga0.65As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures, Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6 x 130 mu m(2) devices at a bias current of 155 mA, which is the damping limit for this structure, We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of similar to 1.1 mu m for these devices.

引用

页码：608 / 610

页数：3

共 11 条

[1] IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING [J].

LARKINS, EC ;

BENZ, W ;

ESQUIVIAS, I ;

ROTHEMUND, W ;

BAEUMLER, M ;

WEISSER, S ;

SCHONFELDER, A ;

FLEISSNER, J ;

JANTZ, W ;

ROSENZWEIG, J ;

RALSTON, JD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (01) :16-19

[2] PACKAGED 1.55-MU-M DFB LASER WITH 25 GHZ MODULATION BANDWIDTH [J].

MORTON, PA ;

TANBUNEK, T ;

LOGAN, RA ;

CHAND, N ;

WECHT, KW ;

SERGENT, AM ;

SCIORTINO, PF .

ELECTRONICS LETTERS, 1994, 30 (24) :2044-2046

[3] OPTICAL AND MICROWAVE PERFORMANCE OF GAAS-ALGAAS AND STRAINED LAYER INGAAS-GAAS-ALGAAS GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL LASERS [J].

OFFSEY, SD ;

SCHAFF, WJ ;

TASKER, PJ ;

EASTMAN, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (01) :9-11

[4] MEASUREMENT OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATES IN INGAASP AND ALGAAS LIGHT-SOURCES [J].

OLSHANSKY, R ;

SU, CB ;

MANNING, J ;

POWAZINIK, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) :838-854

[5] LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33-GHZ IN INGAAS/GAAS/ALGAAS PSEUDOMORPHIC MQWRIDGE-WAVE-GUIDE LASERS [J].

RALSTON, JD ;

WEISSER, S ;

EISELE, K ;

SAH, RE ;

LARKINS, EC ;

ROSENZWEIG, J ;

FLEISSNER, J ;

BENDER, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (09) :1076-1079

[6] CONTROL OF DIFFERENTIAL GAIN, NONLINEAR GAIN, AND DAMPING FACTOR FOR HIGH-SPEED APPLICATION OF GAAS-BASED MQW LASERS [J].

RALSTON, JD ;

WEISSER, S ;

ESQUIVIAS, I ;

LARKINS, EC ;

ROSENZWEIG, J ;

TASKER, PJ ;

FLEISSNER, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1648-1659

[7] DIFFERENTIAL GAIN, REFRACTIVE-INDEX, AND LINEWIDTH ENHANCEMENT FACTOR IN HIGH-SPEED GAAS-BASED MQW LASERS - INFLUENCE OF STRAIN AND P-DOPING [J].

SCHONFELDER, A ;

WEISSER, S ;

RALSTON, JD ;

ROSENZWEIG, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (08) :891-893

[8]

SPENCER RM, 1995, P IEEE LAS EL OPT SO, V1, P99

[9] IMPEDANCE CHARACTERISTICS OF QUANTUM-WELL LASERS [J].

WEISSER, S ;

ESQUIVIAS, I ;

TASKER, PJ ;

RALSTON, JD ;

ROMERO, B ;

ROSENZWEIG, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (12) :1421-1423

[10]

WEISSER S, 1995, P 21 EUR C OPT COMM, P1015

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