LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33-GHZ IN INGAAS/GAAS/ALGAAS PSEUDOMORPHIC MQWRIDGE-WAVE-GUIDE LASERS

被引：32

作者：

RALSTON, JD

WEISSER, S

EISELE, K

SAH, RE

LARKINS, EC

ROSENZWEIG, J

FLEISSNER, J

BENDER, K

机构：

[1] Fraunhofer-Institut fur Aneewandte, Festkörper physik, D-79108 Freiburg

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 09期

关键词：

D O I：

10.1109/68.324673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modulation bandwidths of 24 GHz (I(bias) = 25 mA) and 33 GHz (I(bias) = 65 mA) are demonstrated for 3 x 100 mum2 In0.35 Ga0.65 As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facets using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exceeding 5 GHz/mA1/2, the best reported results for any semiconductor laser.

引用

页码：1076 / 1079

页数：4

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