7.4 GBIT/S MONOLITHICALLY INTEGRATED GAAS/ALGAAS LASER DIODE-LASER DRIVER STRUCTURE

被引：7

作者：

HORNUNG, J

WANG, ZG

BRONNER, W

OLANDER, E

KOHLER, K

GANSER, P

RAYNOR, B

BENZ, W

LUDWIG, M

机构：

[1] Fraunhofer-Institut für Angewandte FestkSrperphysik

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 19期

关键词：

OPTICAL COMMUNICATION; INTEGRATED CIRCUITS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19931127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A molecular beam epitaxy (MBE) grown (GaAs/AlGaAs multiquantum well laser, monolithically integrated with a laser driver, was realised on 2 inch GaAs substrate wafers. In an optical data communication setup, performance up to data rates of 7.4Gbit/s was demonstrated.

引用

收藏

页码：1694 / 1696

页数：3

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