MONOLITHIC INTEGRATION OF INGAASP/INP LASERS AND HETEROSTRUCTURE BIPOLAR-TRANSISTORS BY SELECTIVE AREA EPITAXY

被引：5

作者：

AN, X

TEMKIN, H

FEYGENSON, A

HAMM, RA

COTTA, MA

LOGAN, RA

COBLENTZ, D

YADVISH, RD

机构：

[1] Electrical Engineering Department, Colorado State University, Ft. Collins

[2] AT&T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

SEMICONDUCTOR LASERS; SELECTIVE AREA EPITAXY;

D O I：

10.1049/el:19930432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Letter describes the use of selective area epitaxy to prepare monolithically integrated lasers and heterostructure bipolar transistors based on InGaAsP/InP. Selective growth offers a versatile method of lateral integration of structurally dissimilar devices with the different device structures grown side by side in different growth cycles. Individual devices can be optimised separately without any performance compromise. Bipolar transistors grown on the semi-insulating current blocking layers of the buried heterostructure lasers show high gain, high breakdown voltage and excellent high current stability. Laser threshold is reached at a base current as low as 160 muA and the light output is linear with current to 10 mW.

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页码：645 / 646

页数：2

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