INGAAS INP COMPOSITE COLLECTOR HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：28

作者：

FEYGENSON, A

RITTER, D

HAMM, RA

SMITH, PR

MONTGOMERY, RK

YADVISH, RD

TEMKIN, H

PANISH, MB

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 07期

关键词：

BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high speed bipolar transistor with high breakdown voltage BV(CEO) is described. The structure uses a composite collector of InGaAs and InP. A common emitter gain of 65 is obtained with a base doping of 7 x 10(19) cm-3 and a breakdown voltage in excess of 10 V. The f(T) = 64 GHz was reached at a collector-emitter voltage of 2 V and a current density of 52 kA/cm2. The potential of this structure for very high speed applications is demonstrated by the extracted intrinsic transit time of 0.4 ps.

引用

页码：607 / 609

页数：3

共 11 条

[1]

ASBECK PM, 1990, HIGH SPEED SEMICONDU, P345

[2] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].