5V, DC-12 GHZ INP/INGAAS HBT AMPLIFIER

被引：8

作者：

NOTTENBURG, RN

BANU, M

JALALI, B

HUMPHREY, DA

MONTGOMERY, RK

HAMM, RA

PANISH, MB

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 24期

关键词：

Amplifiers;

D O I：

10.1049/el:19901303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InP/InGaAs HBT cascode amplifier operating from a single 5 V power supply is described. The circuit has a DC gain of 17.2dB and a -3 d B frequency point of 12.3GHz. This results in a gain-bandwidth product in excess of 90 GHz. The frequency response of the amplifier remains constant if the power supply voltage is as low as 4 V. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：2016 / 2018

页数：3

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