BASE DOPING LIMITS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：19

作者：

JALALI, B

NOTTENBURG, RN

LEVI, AFJ

HAMM, RA

PANISH, MB

SIVCO, D

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 15期

关键词：

D O I：

10.1063/1.102498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterostructure bipolar transistors are used to experimentally determine band offsets in lattice-matched In0.53Ga0.47As devices. Valence-band offsets of ΔEV=0.24 eV for Al 0.48In0.52As/In0.53Ga0.47As and ΔEV=0.34 eV for InP/In0.53Ga0.47As are measured. Because of band filling in the base, these values place important constraints on p-type doping levels and emitter injection efficiency in practical devices.

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页码：1460 / 1462

页数：3

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