NEAR-IDEAL LATERAL SCALING IN ABRUPT AL0.48IN0.52AS/IN0.53GA0.47AS HETEROSTRUCTURE BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：40

作者：

JALALI, B

NOTTENBURG, RN

CHEN, YK

LEVI, AFJ

SIVCO, D

CHO, AY

HUMPHREY, DA

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 23期

关键词：

D O I：

10.1063/1.101119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2333 / 2335

页数：3

共 14 条

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