TRANSIENT SIMULATION OF ALGAAS/GAAS/ALGAAS AND ALGAAS/INGAAS/ALGAAS HOT-ELECTRON TRANSISTORS

被引：7

作者：

KUZUHARA, M

KIM, K

HESS, K

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 01期

关键词：

D O I：

10.1109/16.21190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：118 / 123

页数：6

共 26 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS [J].

ANDO, Y ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1497-1502

[3] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS [J].

BRENNAN, K ;

HESS, K .

SOLID-STATE ELECTRONICS, 1984, 27 (04) :347-357

[4] TRANSIENT ELECTRONIC TRANSPORT IN STAIRCASE HETEROSTRUCTURES [J].

BRENNAN, K ;

HESS, K .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) :419-421

[5] SEMICONDUCTOR STRUCTURES FOR REPEATED VELOCITY OVERSHOOT [J].

COOPER, JA ;

CAPASSO, F ;

THORNBER, KK .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :407-408

[6]

Duke C. B., 1969, TUNNELING SOLIDS

[7] STRAINED GAINAS-BASE HOT-ELECTRON TRANSISTOR [J].

HASE, I ;

TAIRA, K ;

KAWAI, H ;

WATANABE, T ;

KANEKO, K ;

WATANABE, N .

ELECTRONICS LETTERS, 1988, 24 (05) :279-280

[8] EVIDENCE OF HOT-ELECTRON TRANSFER INTO AN UPPER VALLEY IN GAAS [J].

HEIBLUM, M ;

CALLEJA, E ;

ANDERSON, IM ;

DUMKE, WP ;

KNOEDLER, CM ;

OSTERLING, L .

PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2854-2857

[9] DC PERFORMANCE OF BALLISTIC TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS [J].

HEIBLUM, M ;

ANDERSON, IM ;

KNOEDLER, CM .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :207-209

[10] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J].

HEIBLUM, M ;

NATHAN, MI ;

THOMAS, DC ;

KNOEDLER, CM .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2200-2203

← 1 2 3 →