TRANSIENT ELECTRONIC TRANSPORT IN STAIRCASE HETEROSTRUCTURES

被引：5

作者：

BRENNAN, K ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 11期

关键词：

D O I：

10.1109/EDL.1983.25786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：419 / 421

页数：3

共 13 条

[1]

BRENNAN K, UNPUB TRANSIENT ELEC

[2]

BRENNAN K, UNPUB HIGH FIELD TRA

[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[4] SEMICONDUCTOR STRUCTURES FOR REPEATED VELOCITY OVERSHOOT [J].

COOPER, JA ;

CAPASSO, F ;

THORNBER, KK .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :407-408

[5] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[6] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].

HILSUM, C .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&

[7] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

[8] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].

RUCH, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :652-&

[9] TRANSPORT PROPERTIES OF GAAS [J].

RUCH, JG ;

KINO, GS .

PHYSICAL REVIEW, 1968, 174 (03) :921-+

[10] HOT-CARRIER RELAXATION IN P-IN0.53GA0.47AS [J].

SHAH, J ;

NAHORY, RE ;

LEHENY, RF ;

DEGANI, J ;

DIGIOVANNI, AE .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :505-507

← 1 2 →