STRAINED GAINAS-BASE HOT-ELECTRON TRANSISTOR

被引：7

作者：

HASE, I

TAIRA, K

KAWAI, H

WATANABE, T

KANEKO, K

WATANABE, N

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 05期

关键词：

D O I：

10.1049/el:19880187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：279 / 280

页数：2

相关论文

共 4 条

[1] INTERVALLEY SCATTERING OBSERVED IN AN ALGAAS GAAS HOT-ELECTRON TRANSISTOR [J].

HASE, I ;

KAWAI, H ;

IMANAGA, S ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2558-2560

[2] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J].

HEIBLUM, M ;

NATHAN, MI ;

THOMAS, DC ;

KNOEDLER, CM .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2200-2203

[3] RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET) USING A GAINAS/(ALGA)INAS HETEROSTRUCTURE [J].

IMAMURA, K ;

MUTO, S ;

OHNISHI, H ;

FUJII, T ;

YOKOYAMA, N .

ELECTRONICS LETTERS, 1987, 23 (17) :870-871

[4] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J].

LEVI, AFJ ;

HAYES, JR ;

PLATZMAN, PM ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2071-2073