RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET) USING A GAINAS/(ALGA)INAS HETEROSTRUCTURE

被引：18

作者：

IMAMURA, K

MUTO, S

OHNISHI, H

FUJII, T

YOKOYAMA, N

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 17期

关键词：

D O I：

10.1049/el:19870616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：870 / 871

页数：2

共 5 条

[1] MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION [J].

CHENG, KY ;

CHO, AY ;

CHRISTMAN, SB ;

PEARSALL, TP ;

ROWE, JE .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :423-425

[2] MBE GROWTH OF INGAALAS LATTICE-MATCHED TO INP BY PULSED MOLECULAR-BEAM METHOD [J].

FUJII, T ;

NAKATA, Y ;

SUGIYAMA, Y ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (03) :L254-L256

[3] CONDUCTION-BAND EDGE DISCONTINUITY OF IN0.52GA0.48AS/IN0.52(GA1-XALX)0.48AS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) HETEROSTRUCTURES [J].

SUGIYAMA, Y ;

INATA, T ;

FUJII, T ;

NAKATA, Y ;

MUTO, S ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08) :L648-L650

[4]

Yokoyama N., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P532

[5] A NEW FUNCTIONAL, RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET) [J].

YOKOYAMA, N ;

IMAMURA, K ;

MUTO, S ;

HIYAMIZU, S ;

NISHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L853-L853

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