HIGH-CURRENT-GAIN INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY

被引：35

作者：

SUGIURA, O

DENTAI, AG

JOYNER, CH

CHANDRASEKHAR, S

CAMPBELL, JC

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Growth - SEMICONDUCTING INDIUM COMPOUNDS - Doping;

D O I：

10.1109/55.707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By inserting a thin n-InP layer between the p** plus -InGaAs base and the n-InP collector excellent transistor characteristics were obtained. The DE and small-signal current gains were 7000 and 11,000, respectively, which are the highest values reported for transistors of this type. The transistors were also operated in a collector-up configuration with DE gains as large as 2500.

引用

页码：253 / 255

页数：3

共 9 条

[1] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES
DENTAI, AG
JOYNER, CH
TELL, B
ZYSKIND, JL
SULHOFF, JW
FERGUSON, JF
CENTANNI, JC
CHU, SNG
CHENG, CL
[J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1186 - 1188
[2] OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS
HAYES, JR
BHAT, R
SCHUMACHER, H
KOZA, M
[J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1298 - 1299
[3] DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS IN INP/GALNAS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
HOUSTON, PA
BLAAUW, C
MARGITTAI, A
SVILANS, MN
PUETZ, N
DAY, DJ
SHEPHERD, FR
SPRINGTHORPE, AJ
[J]. ELECTRONICS LETTERS, 1987, 23 (18) : 931 - 932
[4] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 214 - 216
[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[6] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN
LIN, HH
LEE, SC
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 839 - 841
[7] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS
NOTTENBURG, RN
BISCHOFF, JC
PANISH, MB
TEMKIN, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284
[8] INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC
NOTTENBURG, RN
TEMKIN, H
PANISH, MB
BHAT, R
BISCHOFF, JC
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 643 - 645
[9] NPNN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR ON INGAASP/INP
SU, LM
GROTE, N
KAUMANNS, R
SCHROETER, H
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 28 - 30

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