OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:14
作者
HAYES, JR
BHAT, R
SCHUMACHER, H
KOZA, M
机构
[1] Bell Communications Research Inc,, Red Bank, NJ, USA, Bell Communications Research Inc, Red Bank, NJ, USA
关键词
CURRENT DENSITIES - CURRENT GAINS - EMITTER-BASE JUNCTION - OMCVD;
D O I
10.1049/el:19870898
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1298 / 1299
页数:2
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    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 949 - 951
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    [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 766 - 767
  • [3] HIGH-GAIN INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    NOTTENBURG, RN
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    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1112 - 1114
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    POULAIN, P
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    [J]. ELECTRONICS LETTERS, 1985, 21 (10) : 441 - 442
  • [5] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD
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    DECREMOUX, B
    DUCHEMIN, JP
    [J]. ELECTRONICS LETTERS, 1983, 19 (09) : 336 - 337