INGAAS PHOTODIODES PREPARED BY LOW-PRESSURE MOCVD

被引：18

作者：

POULAIN, P

RAZEGHI, M

KAZMIERSKI, K

BLONDEAU, R

PHILIPPE, P

机构：

[1] Thomson-CSF, Lab Central de, Recherches, Orsay, Fr, Thomson-CSF, Lab Central de Recherches, Orsay, Fr

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 10期

关键词：

MOCVD - PIN PHOTODIODES;

D O I：

10.1049/el:19850314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：441 / 442

页数：2

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